Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Properties of GaN grown at high rates on sapphire and on 6H–SiC

Thick GaN films were deposited with growth rates as high as 250 mm/h by the direct reaction of ammonia and gallium vapor at 1240 °C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on ~0001! sapphire and on ~0001! 6H–SiC were compared in terms of the...

Growth of GaN on SiC(0001) by Molecular Beam Epitaxy

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 10 cm for edge dislocations and 1 10 cm for screw dislocations are achieved in GaN films of 1 m thickness grown under optimal conditions. Reve...

Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy

We have investigated optimal conditions for molecular beam epitaxial growth of high quality GaN on 6H-SiC(0001) substrates. The quality of these films is reflected in both the narrow x-ray peakwidths as well as the excellent surface morphology. In this work, it is shown that increasing growth temperature leads to an improvement in bulk quality and lower xray peakwidth for both symmetric and asy...

Reduction of threading defects in GaN grown on vicinal SiC„0001... by molecular-beam epitaxy

Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)

High quality gallium nitride (GaN) thin films have been grown on 6H-silicon carbide (0001) substrates at varying substrate temperatures using molecular beam epitaxy and characterized at low and high film thicknesses. The epitaxial layers show two regimes in temperature distinguishable by different morphology. For film thicknesses around the critical thickness, low temperature growth is two dime...